petrroudny43/ hBN crystal growthĪ new phase in the study and application of hBN started in 2004 with the development of novel techniques for the growth of large (about 110.2 mm 3) single hBN crystals. However, hBN shows a number of properties that are quite dissimilar from those of both these classes of materials and make it a peculiar and potentially unique candidate for a wide variety of applications. In fact, hBN sits at the intersection of two worlds, the classical four-fold coordinated wurtzitic semiconductors of the (Al, Ga)N type, which are used extensively in short-wavelength solid-state light emitters, and layered semiconductors like graphene and transition metal dichalcogenides. In a similar manner to the derivation of graphene from graphite, monolayer hBN can also be obtained. First synthesised in 1842 as a fragile powder, hBN exhibits a layered crystalline structure, not unlike that of graphite: tightly bound B and N atoms are arranged in weakly interacting reticular planes, which are stacked above each other. Hexagonal boron nitride (hBN) is a versatile solid-state material, which has found a central role in a number of traditional applications, ranging from lubrication to cosmetic powder recipes, thermal control and neutron detection. Edgar (Kansas State University), who has been developing advanced techniques for growing high-purity boron nitride crystals, they are studying the application of hexagonal boron nitride in emerging quantum information technologies. Prof Bernard Gil (Centre National de la Recherche Scientifique) and Prof Guillaume Cassabois (University of Montpellier) have made pioneering contributions to the physics of this intriguing material and to the exploitation of its ability to interact with, and control, electromagnetic radiation. Hexagonal boron nitride is receiving increasing attention worldwide as a solid-state material for its unexpected and incredible potential in applications for optics, biology and the health sciences.
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